HOME > Presentation > Detail(Influence of Al2O3 gate dielectric on transistor properties for IGZO thin film transistor)栗島 一徳, 生田目 俊秀, 清水 麻希, 相川 慎也, 塚越 一仁, 大井 暁彦, 知京 豊裕, 小椋厚志. 225th ECS Meeting. May 11, 2014-May 16, 2014.NIMS author(s)NABATAME, ToshihideTSUKAGOSHI, KazuhitoOHI, AkihikoCHIKYO, ToyohiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-14 11:22:08 +0900Updated at: 2017-07-10 21:45:43 +0900