High-mobility transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures
| 著者 | SASAMA, Yosuke, KAGEURA, Taisuke, IMURA, Masataka, WATANABE, Kenji, TANIGUCHI, Takashi, UCHIHASHI, Takashi, YAMAGUCHI, Takahide. |
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| 会議名 | 32nd International Conference on Diamond and Carbon Materials |
| 発表年 | 2022 |
| 言語 | English |