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High-mobility transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures

32nd International Conference on Diamond and Carbon Materials. 2022.

NIMS著者


Materials Data Repository (MDR)上の本文・データセット


    作成時刻 :2022-12-29 03:32:10 +0900 更新時刻 :2022-12-29 03:32:10 +0900

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