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High-mobility transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures

SASAMA, Yosuke, KAGEURA, Taisuke, IMURA, Masataka, WATANABE, Kenji, TANIGUCHI, Takashi, UCHIHASHI, Takashi, YAMAGUCHI, Takahide.
32nd International Conference on Diamond and Carbon Materials. 2022. Invited

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Fulltext and dataset(s) on Materials Data Repository (MDR)

    Created at: 2022-12-29 03:32:10 +0900Updated at: 2024-03-05 12:22:05 +0900

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