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High-mobility transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures
| Author(s) | SASAMA, Yosuke, KAGEURA, Taisuke, IMURA, Masataka, WATANABE, Kenji, TANIGUCHI, Takashi, UCHIHASHI, Takashi, YAMAGUCHI, Takahide. |
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| Event name | 32nd International Conference on Diamond and Carbon Materials |
| Year of publication | 2022 |
| Language | English |