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Electrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N2 Atmosphere

Hasselt Diamond Workshop 2017 - SBDD XXII. 2017.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2017-12-28 22:11:05 +0900Updated at: 2018-06-05 14:07:05 +0900

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