HOME > Presentation > DetailElectrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N2 AtmosphereIMURA, Masataka, BANAL, Ganipan Ryan, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Hasselt Diamond Workshop 2017 - SBDD XXII. 2017.NIMS author(s)IMURA, MasatakaLIU, JiangweiLIAO, MeiyongKOIDE, YasuoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-12-28 22:11:05 +0900Updated at: 2018-06-05 14:07:05 +0900