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300 °C低温形成したHfxZr1−xO2薄膜の強誘電性
(Ferroelectricity of HfxZr1−xO2 thin films fabricated using low temperature process at 300 °C)
第66回応用物理学会春季学術講演会. March 09, 2019-March 12, 2019.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2019-07-23 03:00:23 +0900Updated at: 2019-07-23 03:00:23 +0900