| 307件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Kazunori Takada, Kenjiro Fujimoto, Takayoshi Sasaki, Mamoru Watanabe. Combinatorial electrode array for high-throughput evaluation of combinatorial library for electrode material. Applied Surface Science. 223 [1-3] (2004) 210-213 10.1016/s0169-4332(03)00924-3 | |
| Kenjiro Fujimoto, Kazunori Takada, Takayoshi Sasaki, Mamoru Watanabe. Combinatorial approach for powder preparation of preudo-ternary system LiO0.5-X-TiO2(X:FeO1.5,CrO1.5 and NiO). Applied Surface Science. 223 [1-3] (2004) 49-53 10.1016/s0169-4332(03)00897-3 | |
| OHTAKE, Akihiro, TSUKAMOTO, Shiro, MARKUS, PRISTOVSEK, KOGUCHI, Nobuyuki. Structure of the Ga-stabilized GaAs(001)-c(8x2) surfaces at high temperatures. APPLIED SURFACE SCIENCE. (2003) 146-150 | |
| 朴大出, SAKAGUCHI, Isao, 大橋直樹, 菱田俊一, HANEDA, Hajime. SIMS DEPTH PROFILING OF N AND In IN ZnO SINGLE CRYSTAL. APPLIED SURFACE SCIENCE. (2003) 359-362 | |
| Thi Thi Lay, M. Yoshitake, S. Bera. Surface Segregation of Al Substrate Metal on Zr Film Surface. Applied Surface Science. 220 [1-4] (2003) 113-116 10.1016/s0169-4332(03)00790-6 | |
| 大門秀朗, KUBO, Osamu, 山岡延充, 伊東祐徳, 片山光浩, 尾浦憲治郎. In Situ Observation of Oxygen-induced Anisotropic Surface Etching Processes at 6H-SiC(0001) by Variable Temperature Scanning Tun. APPLIED SURFACE SCIENCE. (2003) 575-578 | |
| K. Nishida, K. Shirakata, M. Osada, M. Kakihana, T. Katoda. Growth mechanism of PTO on MgO at initial stage. Applied Surface Science. 216 [1-4] (2003) 323-328 10.1016/s0169-4332(03)00455-0 | |
| K. Nishida, T. Sugino, M. Osada, M. Kakihana, T. Katoda. An orientation ratio and ferroelectric properties of ultra-thin PTO films. Applied Surface Science. 216 [1-4] (2003) 312-317 10.1016/s0169-4332(03)00446-x | |
| K. Nishida, G. Matuoka, M. Osada, M. Kakihana, T. Katoda. Effects of the substrate on properties of PTO thin film. Applied Surface Science. 216 [1-4] (2003) 318-322 10.1016/s0169-4332(03)00450-1 | |
| Y. Wakayama, L.V. Sokolov, N. Zakharov, P. Werner, U. Gösele. Precise control of size and density of self-assembled Ge dot on Si(100) by carbon-induced strain-engineering. Applied Surface Science. 216 [1-4] (2003) 419-423 10.1016/s0169-4332(03)00385-4 | |
