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論文・分野から探す

機構に所属する研究者の発表した論文を、タイトル・抄録・分野などから検索することができます。論文の分野はクラリベイト社のESI分類を参考に分類しています(Materials Science, Physics, Chemistry, Engineering, Biologyなど)。

最終更新日: 2026年11月13日

49740件の論文が見つかりました。論文は出版年月日順に表示しています。(ヘルプ)
  • Satoshi Okada, Satori Kowashi, Luca Schweighauser, Kaoru Yamanouchi, Koji Harano, Eiichi Nakamura. Direct Microscopic Analysis of Individual C60 Dimerization Events: Kinetics and Mechanisms. Journal of the American Chemical Society. 139 [50] (2017) 18281-18287 10.1021/jacs.7b09776
  • Akhilesh Babu Ganganboina, Ankan Dutta Chowdhury, Ruey-an Doong. New Avenue for Appendage of Graphene Quantum Dots on Halloysite Nanotubes as Anode Materials for High Performance Supercapacitors. ACS Sustainable Chemistry & Engineering. 5 [6] (2017) 4930-4940 10.1021/acssuschemeng.7b00329
  • Akhilesh Babu Ganganboina, Ankan Dutta Chowdhury, Ruey-an Doong. Nano assembly of N-doped graphene quantum dots anchored Fe3O4/halloysite nanotubes for high performance supercapacitor. Electrochimica Acta. 245 (2017) 912-923 10.1016/j.electacta.2017.06.002
  • M. M. Maitani, K. Tanaka, H. Satou, T. Oshima, A. Ohtomo, Y. Wada. Hetero-epitaxial growth control of single-crystalline anatase TiO2 nanosheets predominantly exposing the {001} facet on oriented crystalline substrates. CrystEngComm. 19 [32] (2017) 4734-4741 10.1039/c7ce00754j
  • Takayoshi Oshima, Yuji Kato, Naoto Kawano, Akito Kuramata, Shigenobu Yamakoshi, Shizuo Fujita, Toshiyuki Oishi, Makoto Kasu. Carrier confinement observed at modulation-doped β-(Al x Ga1− x )2O3/Ga2O3 heterojunction interface. Applied Physics Express. 10 [3] (2017) 035701 10.7567/apex.10.035701
  • Masato M. Maitani, Takuya Yamada, Hisanori Mashiko, Kohei Yoshimatsu, Takayoshi Oshima, Akira Ohtomo, Yuji Wada. Microwave Effects on Co–Pi Cocatalysts Deposited on α-Fe2O3 for Application to Photocatalytic Oxygen Evolution. ACS Applied Materials & Interfaces. 9 [12] (2017) 10349-10354 10.1021/acsami.6b16319
  • Takayoshi Oshima, Yuji Kato, Masaya Oda, Toshimi Hitora, Makoto Kasu. Epitaxial growth of γ-(AlxGa1−x)O3alloy films for band-gap engineering. Applied Physics Express. 10 [5] (2017) 051104 10.7567/apex.10.051104
  • Satoshi Masuya, Kenji Hanada, Takayoshi Oshima, Hitoshi Sumiya, Makoto Kasu. Formation of stacking fault and dislocation behavior during the high-temperature annealing of single-crystal HPHT diamond. Diamond and Related Materials. 75 (2017) 155-160 10.1016/j.diamond.2017.04.003
  • Takayoshi Oshima, Akihiro Hashiguchi, Tomoya Moribayashi, Kimiyoshi Koshi, Kohei Sasaki, Akito Kuramata, Osamu Ueda, Toshiyuki Oishi, Makoto Kasu. Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3substrates with crystal defects. Japanese Journal of Applied Physics. 56 [8] (2017) 086501 10.7567/jjap.56.086501
  • Makoto Kasu, Takayoshi Oshima, Kenji Hanada, Tomoya Moribayashi, Akihiro Hashiguchi, Toshiyuki Oishi, Kimiyoshi Koshi, Kohei Sasaki, Akito Kuramata, Osamu Ueda. Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on $(\bar{2}01)$ β-Ga2O3. Japanese Journal of Applied Physics. 56 [9] (2017) 091101 10.7567/jjap.56.091101
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