| 10767件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Junyu Zhu, Fabien Briffod, Takayuki Shiraiwa, Manabu Enoki, Satoshi Emura. Potential kink band formation on α/β two-phase Ti-10Cr alloy under compressive condition. Materials Science and Engineering: A. 849 (2022) 143538 10.1016/j.msea.2022.143538 | |
| Alexander D. Pogrebnjak, Vladimir V. Buranich, P. Horodek, P. Budzynski, P. Konarski, H. Amekura, N. Okubo, N. Ishikawa, A. A. Bagdasaryan, Bauyrzhan K. Rakhadilov, V. Tarelnik, Ł. Sobaszek, P. Zukowski, M. Opielak. EVALUATION OF THE PHASE STABILITY, MICROSTRUCTURE, AND DEFECTS IN HIGH-ENTROPY CERAMICS AFTER HIGH-ENERGY ION IMPLANTATION. High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes. 26 [3] (2022) 77-93 10.1615/hightempmatproc.2022043733 | |
| Muhammad Monirul Islam, Hajer Said, Ahmed Hichem Hamzaoui, Adel Mnif, Takeaki Sakurai, Naoki Fukata, Katsuhiro Akimoto. Study of Structural and Optical Properties of Electrodeposited Silicon Films on Graphite Substrates. Nanomaterials. 12 [3] (2022) 363 10.3390/nano12030363 Open Access | |
| Yong-Lie Sun, Xiang-Dong Zheng, Wipakorn Jevasuwan, Naoki Fukata. ZnO/Ge core–shell nanowires and Ge nanotubes fabricated by chemical vapor deposition and wet etching. Nanotechnology. 33 [32] (2022) 325602 10.1088/1361-6528/ac6bac | |
| Naoki Fukata, Wipakorn Jevasuwan, Yong-Lie Sun, Yoshimasa Sugimoto. Defect control and Si/Ge core–shell heterojunction formation on silicon nanowire surfaces formed using the top-down method. Nanotechnology. 33 [13] (2022) 135602 10.1088/1361-6528/ac3fe4 | |
| Qianhui Shi, En-Min Shih, Daniel Rhodes, Bumho Kim, Katayun Barmak, Kenji Watanabe, Takashi Taniguchi, Zlatko Papić, Dmitry A. Abanin, James Hone, Cory R. Dean. Bilayer WSe2 as a natural platform for interlayer exciton condensates in the strong coupling limit. Nature Nanotechnology. 17 [6] (2022) 577-582 10.1038/s41565-022-01104-5 | |
| Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio. Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN. ACS Applied Materials & Interfaces. 14 [22] (2022) 25659-25669 10.1021/acsami.2c03198 | |
| A Pierret, D Mele, H Graef, J Palomo, T Taniguchi, K Watanabe, Y Li, B Toury, C Journet, P Steyer, V Garnier, A Loiseau, J-M Berroir, E Bocquillon, G Fève, C Voisin, E Baudin, M Rosticher, B Plaçais. Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride. Materials Research Express. 9 [6] (2022) 065901 10.1088/2053-1591/ac4fe1 Open Access | |
| Takuya Aoyagi, Yohei Onodera, Shinji Kohara, Takashi Naito, Toshiaki Ina, Daiko Takamatsu, Taigo Onodera, Tatsuya Miyake, Shinichi Tachizono, Kei Yoshimura. Effect of adding Ag2O to vanadium-containing low-melting glass for low-temperature sealing. Journal of the Ceramic Society of Japan. 130 [7] (2022) 22024 10.2109/jcersj2.22024 Open Access | |
| Supawan Ngamprapawat, Tomonori Nishimura, Kenji Watanabe, Takashi Taniguchi, Kosuke Nagashio. Current Injection into Single-Crystalline Carbon-Doped h-BN toward Electronic and Optoelectronic Applications. ACS Applied Materials & Interfaces. 14 [22] (2022) 25731-25740 10.1021/acsami.2c04544 | |
