HOME > 論文 > 書誌詳細Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substratesYoshihiro Irokawa, Tomoko Ohki, Toshihide Nabatame, Yasuo Koide. Japanese Journal of Applied Physics 60 [6] 068003. 2021.https://doi.org/10.35848/1347-4065/ac0260 NIMS著者色川 芳宏若井 知子生田目 俊秀小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2021-06-05 03:00:25 +0900更新時刻: 2024-04-02 03:24:43 +0900
