HOME > Article > DetailAmbient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substratesYoshihiro Irokawa, Tomoko Ohki, Toshihide Nabatame, Yasuo Koide. Japanese Journal of Applied Physics 60 [6] 068003. 2021.https://doi.org/10.35848/1347-4065/ac0260 NIMS author(s)IROKAWA, YoshihiroWAKAI, TomokoNABATAME, ToshihideKOIDE, YasuoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2021-06-05 03:00:25 +0900Updated at: 2024-11-14 05:15:12 +0900