Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates
Author(s) | Yoshihiro Irokawa, Tomoko Ohki, Toshihide Nabatame, Yasuo Koide. |
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Journal title | Japanese Journal of Applied Physics 60 [6] 068003 ISSN: 13474065, 00214922 ESI category: PHYSICS |
Publisher | IOP Publishing |
Year of publication | 2021 |
Language | English |
DOI | https://doi.org/10.35848/1347-4065/ac0260 |
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