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Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates

Author(s)Yoshihiro Irokawa, Tomoko Ohki, Toshihide Nabatame, Yasuo Koide.
Journal titleJapanese Journal of Applied Physics 60 [6] 068003
ISSN: 13474065, 00214922
ESI category: PHYSICS
PublisherIOP Publishing
Year of publication2021
LanguageEnglish
DOIhttps://doi.org/10.35848/1347-4065/ac0260
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