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Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates

Yoshihiro Irokawa, Tomoko Ohki, Toshihide Nabatame, Yasuo Koide.
Japanese Journal of Applied Physics 60 [6] 068003. 2021.
https://doi.org/10.35848/1347-4065/ac0260

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    Created at: 2021-06-05 03:00:25 +0900 Updated at: 2025-05-20 05:22:58 +0900

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