HOME > 論文 > 書誌詳細Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitorsToshihide Nabatame, Erika Maeda, Mari Inoue, Kazuya Yuge, Masafumi Hirose, Koji Shiozaki, Naoki Ikeda, Tomoji Ohishi, Akihiko Ohi. Applied Physics Express 12 [1] 011009. 2019.https://doi.org/10.7567/1882-0786/aaf62a NIMS著者生田目 俊秀弓削 雅津也池田 直樹大井 暁彦Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-03-01 11:35:23 +0900更新時刻: 2024-04-02 01:10:39 +0900
