HOME > Article > DetailHafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitorsToshihide Nabatame, Erika Maeda, Mari Inoue, Kazuya Yuge, Masafumi Hirose, Koji Shiozaki, Naoki Ikeda, Tomoji Ohishi, Akihiko Ohi. Applied Physics Express 12 [1] 011009. 2019.https://doi.org/10.7567/1882-0786/aaf62a NIMS author(s)NABATAME, ToshihideIKEDA, NaokiOHI, AkihikoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2019-03-01 11:35:23 +0900 Updated at: 2026-10-07 04:30:54 +0900
