HOME > 論文 > 書誌詳細Pt/GaN Schottky Barrier Height Lowering by Incorporated HydrogenYoshihiro Irokawa, Akihiko Ohi, Toshihide Nabatame, Yasuo Koide. ECS Journal of Solid State Science and Technology 13 [4] 045002. 2024.https://doi.org/10.1149/2162-8777/ad3959 Open Access The Electrochemical Society (Publisher) Materials Data Repository (MDR) NIMS著者色川 芳宏大井 暁彦生田目 俊秀Materials Data Repository (MDR)上の本文・データセットMDRavailable Pt/GaN Schottky barrier height lowering by incorporated hydrogen 作成時刻: 2024-04-11 03:11:57 +0900 更新時刻: 2026-10-10 04:30:18 +0900
