HOME > Article > DetailPt/GaN Schottky Barrier Height Lowering by Incorporated HydrogenYoshihiro Irokawa, Akihiko Ohi, Toshihide Nabatame, Yasuo Koide. ECS Journal of Solid State Science and Technology 13 [4] 045002. 2024.https://doi.org/10.1149/2162-8777/ad3959 Open Access The Electrochemical Society (Publisher) Materials Data Repository (MDR) NIMS author(s)IROKAWA, YoshihiroOHI, AkihikoNABATAME, ToshihideFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Pt/GaN Schottky barrier height lowering by incorporated hydrogen Created at: 2024-04-11 03:11:57 +0900 Updated at: 2026-10-10 04:30:18 +0900
