Improvement in ferroelectricity of Hf x Zr1− x O2 thin films using ZrO2 seed layer | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Improvement in ferroelectricity of Hf x Zr1− x O2 thin films using ZrO2 seed layer
(Improvement in ferroelectricity of HfxZr1-xO2 thin film using ZrO2 seed layer)

Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow, Atsushi Ogura.

Applied Physics Express 10 [8] 081501. 2017.

https://doi.org/10.7567/apex.10.081501

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2017-07-15 21:48:52 +0900更新時刻: 2024-09-08 06:15:28 +0900

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