HOME > 論文 > 書誌詳細Hafnium 4f Core-level Shifts Caused by Nitrogen Incorporation in Hf-based High-k Gate DielectricsNaoto Umezawa, Kenji Shiraishi, Seiichi Miyazaki, Takahisa Ohno, Toyohiro Chikyow, Keisaku Yamada, Yasuo Nara. Japanese Journal of Applied Physics 46 [6A] 3507-3509. 2007.https://doi.org/10.1143/jjap.46.3507 NIMS著者知京 豊裕Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 15:15:43 +0900 更新時刻: 2026-09-29 04:23:01 +0900
