HOME > Article > DetailHafnium 4f Core-level Shifts Caused by Nitrogen Incorporation in Hf-based High-k Gate DielectricsNaoto Umezawa, Kenji Shiraishi, Seiichi Miyazaki, Takahisa Ohno, Toyohiro Chikyow, Keisaku Yamada, Yasuo Nara. Japanese Journal of Applied Physics 46 [6A] 3507-3509. 2007.https://doi.org/10.1143/jjap.46.3507 NIMS author(s)CHIKYO, ToyohiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 15:15:43 +0900Updated at: 2024-03-30 01:52:49 +0900
