HOME > 論文 > 書誌詳細First-principles modeling of defect-free abrupt SiC/SiO2 interfaces on a- and m-face 4H-SiCTomoaki Kaneko, Nobuo Tajima, Takahiro Yamasaki, Jun Nara, Tatsuo Schimizu, Koichi Kato, Takahisa Ohno. Applied Physics Express 11 [10] 101304. 2018.https://doi.org/10.7567/apex.11.101304 NIMS著者奈良 純Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-03-01 11:35:46 +0900更新時刻: 2024-04-02 01:43:08 +0900
