HOME > Article > DetailFirst-principles modeling of defect-free abrupt SiC/SiO2 interfaces on a- and m-face 4H-SiCTomoaki Kaneko, Nobuo Tajima, Takahiro Yamasaki, Jun Nara, Tatsuo Schimizu, Koichi Kato, Takahisa Ohno. Applied Physics Express 11 [10] 101304. 2018.https://doi.org/10.7567/apex.11.101304 NIMS author(s)NARA, JunOHNO, TakahisaFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2019-03-01 11:35:46 +0900 Updated at :2021-03-08 20:12:44 +0900