HOME > Article > DetailSubnanometer silicon oxide growth on n-Si(100), (111), and (110) using ozonized water treatmentWipakorn Jevasuwan, Toshihide Nabatame, Tomomi Sawada, Hiromi Miura, Takashi Onaya, Kazuhito Tsukagoshi, Naoki Fukata. Materials Science in Semiconductor Processing 216 111056. 2026.https://doi.org/10.1016/j.mssp.2026.111056 NIMS author(s)JEVASUWAN, WipakornNABATAME, ToshihideONAYA, TakashiTSUKAGOSHI, KazuhitoFUKATA, NaokiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2026-09-01 03:06:02 +0900 Updated at: 2026-10-03 07:09:22 +0900
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