Lattice-plane orientation mapping of homo-epitaxial GaN(0001) thin films via grazing-incidence X-ray diffraction topography in 2-in. wafer | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Lattice-plane orientation mapping of homo-epitaxial GaN(0001) thin films via grazing-incidence X-ray diffraction topography in 2-in. wafer

Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata.

Applied Physics Express 11 [8] 081002. 2018.

https://doi.org/10.7567/apex.11.081002

Open Access Japan Society of Applied Physics (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2018-07-08 15:34:17 +0900更新時刻: 2024-03-29 22:52:38 +0900

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