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Lattice-plane orientation mapping of homo-epitaxial GaN(0001) thin films via grazing-incidence X-ray diffraction topography in 2-in. wafer

Applied Physics Express 11 [8] 081002. 2018.
Open Access Japan Society of Applied Physics (Publisher)

NIMS author(s)


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    Created at: 2018-07-08 15:34:17 +0900 Updated at: 2026-10-29 05:00:13 +0900

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