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Lattice-plane orientation mapping of homo-epitaxial GaN(0001) thin films via grazing-incidence X-ray diffraction topography in 2-in. wafer

Applied Physics Express 11 [8] 081002. 2018.
Open Access Japan Society of Applied Physics (Publisher)

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    作成時刻 :2018-07-08 15:34:17 +0900 更新時刻 :2020-11-16 23:22:14 +0900

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