Growth of Metamorphic InGaAs on GaAs (111)A: Counteracting Lattice Mismatch by Inserting a Thin InAs Interlayer | SAMURAI, NIMS Researchers Directory Service

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Growth of Metamorphic InGaAs on GaAs (111)A: Counteracting Lattice Mismatch by Inserting a Thin InAs Interlayer
(Growth of metamorphic InGaAs on GaAs(111)A: counteracting lattice mismatch by inserting a thin InAs interlayer)

Takaaki Mano, Kazutaka Mitsuishi, Neul Ha, Akihiro Ohtake, Andrea Castellano, Stefano Sanguinetti, Takeshi Noda, Yoshiki Sakuma, Takashi Kuroda, Kazuaki Sakoda.

Crystal Growth & Design 16 [9] 5412-5417. 2016.

https://doi.org/10.1021/acs.cgd.6b00899

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-10-26 15:40:00 +0900Updated at: 2024-04-01 18:18:12 +0900

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