- Address
- 305-0044 茨城県つくば市並木1-1 [アクセス]
[論文] | [書籍] | [会議録] | [口頭発表] | [その他の文献] | [公開特許出願]
論文 TSV
2024
- Yuhua Tsai, Yusuke Hashimoto, ZeXu Sun, Takuya Moriki, Takashi Tadamura, Takahiro Nagata, Piero Mazzolini, Antonella Parisini, Matteo Bosi, Luca Seravalli, Tomohiro Matsushita, Yoshiyuki Yamashita. Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001). Nano Letters. 24 [13] (2024) 3978-3985 10.1021/acs.nanolett.4c00482
- Yuhua Tsai, Masaaki Kobata, Tatsuo Fukuda, Hajime Tanida, Toru Kobayashi, Yoshiyuki Yamashita. Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001). Applied Physics Letters. 124 [11] (2024) 112105 10.1063/5.0198160 Open Access
2023
- Yuhua Tsai, Jingmin Tang, Yoshiyuki Yamashita. X-ray Absorption Fine Structural Study of Atomic Structures and Chemical States of Dopants in 4H-SiC(0001). ACS Applied Electronic Materials. 5 [7] (2023) 3843-3850 10.1021/acsaelm.3c00546