HOME > Profile > KAWAMURA, Fumio
- Address
- 305-0044 1-1 Namiki Tsukuba Ibaraki JAPAN [Access]
Accepting Students
Research
- Keywords
単結晶、新物質、窒化物
半導体薄膜、バルク半導体、半導体単結晶
高効率パワートランジスタを実現する鍵となる『シリコンウェハー上の縦型GaNデバイス成膜技術』
PublicationsNIMS affiliated publications since 2004.
Published patent applications
Society memberships
応用物理学会, 日本高圧力学会, 日本金属学会
Research Center for Electronic and Optical Materials
Title
Development of Vertical GaN-on-Si Devices Using Novel Buffer Layer Formation and Ultra-Low Dislocation Technologies
Keywords
Thin-film, Semiconductor, LPE, Single crystal, Buffer layer
Overview
With the projected widespread adoption of data centers, electric vehicles (EVs), and drones, there is a strong demand for power transistors capable of efficiently handling high currents. Concurrently, the advancement of micro-LEDs and optoelectronic integration technology is also highly sought after.
The key to realizing these technologies lies in "vertical GaN device deposition technology on silicon wafers." To date, NIMS has successfully developed a novel buffer layer that achieves high-quality GaN epitaxial growth on Si wafers, vertical current flow enabled by a low-resistance buffer layer, and sufficient thermal resistance, and is actively driving development toward full-scale power device implementation.
Furthermore, the development of ultra-low dislocation technology utilizing Liquid Phase Epitaxy (LPE) growth technique is currently underway.
Novelty and originality
For the past two decades, realizing vertical GaN devices has been a long-sought goal in the field of transistor technology. In particular, because vertical GaN transistors can efficiently handle large currents, their implementation is urgently needed to address the surging power consumption of data centers and to improve the efficiency of electric vehicles (EVs). Realizing vertical GaN devices on silicon (Si) substrates would represent a major breakthrough. At NIMS, we have successfully established fundamental technologies toward this goal by developing a novel buffer layer formation process. Furthermore, we are currently working on the development of ultra-low dislocation density technology using Liquid Phase Epitaxy (LPE) growth.
Details
To date, GaN-on-Si commercialization has been limited to lateral devices (HEMTs), which are now rapidly spreading in consumer electronics like USB chargers thanks to their high-efficiency DC-AC power conversion. However, high-growth future markets—including data centers, EVs, and drones—demand vertical GaN transistors that can handle much larger currents, necessitating groundbreaking low-resistance buffer layer technologies. NIMS has overcome this hurdle by developing an Amorphous-like Interlayer (AL-IL), a key technology that brings practical vertical GaN devices dramatically closer to reality.
Summary
近年、急速に進展しているベルト型高圧装置を用いた新物質創製の更なる発展と共に、薄膜材料の高温・高圧相転移、或いは薄膜の高圧アニール技術による新材料開発を通じて、新たなデバイスの実現に向けて今後も精力的な開発を実施していく。
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