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酸素分子による4H-SiC/SiO2界面酸化の第一原理動的シミュレーション
(First-Principles Dynamical Simulations for O2 Oxidation at 4H-SiC/SiO2 Interfaces)
先進パワー半導体分科会第2回講演会. 2015.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 05:51:24 +0900Updated at: 2017-07-10 22:18:47 +0900