Oxygen-Passivated (O-PAS) Interfacial Layer for Ultra-Scaled (CET 0.97 nm) High-k Gate Stacks

Yukinori Morita, Takamasa Kawanago, Takefumi Kamioka, Yuichiro Mitani, NABATAME, Toshihide, ONAYA, Takashi, FUKATA, Naoki, JEVASUWAN, Wipakorn, TSUKAGOSHI, Kazuhito, Takuya Hoshii, Kasidit Toprasertpong, Koji Kita, Naoya Okada, Kenzo Manabe, Wataru Mizubayashi.

10th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2026. 2026年03月01日-2026年03月04日.

作成時刻: 2026-08-07 03:08:12 +0900 更新時刻: 2026-09-05 03:06:26 +0900