HOME > Presentation > DetailFabrication of triple-gate fin-type hydrogenated diamond MOSFETs劉 江偉, 大里 啓孝, 王 煕, 廖 梅勇, 小出 康夫. The 77th JSAP Autumn Meeting, 2016. September 13, 2016-September 16, 2016.NIMS author(s)LIU, JiangweiOOSATO, HirotakaLIAO, MeiyongFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-01-08 05:03:13 +0900 Updated at: 2018-06-05 13:59:09 +0900