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PE-ALD法で作製したAl2O3絶縁膜を用いたIGZO-TFTの電気特性の変化
(Electrical properties of IGZO-TFT with Al2O3 gate insulators by PE-ALD method)
ゲートスタック研究会. January 24, 2014-January 25, 2014.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 10:50:49 +0900Updated at: 2018-06-05 13:28:10 +0900