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PE-ALD法で作製したAl2O3絶縁膜を用いたIGZO TFTの電気特性への影響
(Influence of electrical properties for IGZO TFT with Al2O3 gate insulators by PE-ALD method)
14th International Conference on Atomic Layer Deposition. June 15, 2014-June 18, 2014.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:42:02 +0900 Updated at: 2017-07-10 21:50:39 +0900