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原子層堆積法による水素終端ダイヤモンド上にＡｌ２Ｏ３とＨｆＯ２の電子構造
(Electronic band structures of Al2O3 and HfO2 deposited by atomic layer deposition technique on hydrogenated diamond)
第60回応用物理学会春季学術講演会. 2013.
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Created at: 2017-02-14 11:36:06 +0900Updated at: 2017-07-10 21:35:06 +0900