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HfO2/Hydrogenated-diamond field effect transistors for power devices
第13回 NIMSフォーラム. 2013-10-24.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:30:10 +0900 Updated at: 2017-07-10 21:42:38 +0900