HOME > Presentation > DetailImaging of Leakage Sites in High-k Gate Electrode by using Electron-beam-induced Current Technique関口 隆史, 陳 君, 高瀬 雅美, 深田 直樹, 知京 豊裕. International Conference onSolid State Devices and Materials. 2008. InvitedNIMS author(s)CHEN, JunFUKATA, NaokiCHIKYO, ToyohiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-14 11:16:58 +0900Updated at: 2024-03-05 11:42:05 +0900