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h-BNゲート絶縁体を用いたノーマリーオフ型高移動度ダイヤモンドFET
(Normally-Off High-Mobility Diamond FET with a h-BN Gate Insulator)
2022年第69回応用物理学会春季学術講演会. March 22, 2022-March 26, 2022. Invited
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2022-04-12 03:25:25 +0900 Updated at: 2024-03-05 12:21:55 +0900