HOME > Presentation > Detail
4H-SiC/SiO2界面におけるNO酸窒化による炭素窒素置換反応
(First-Principles Molecular Dynamics Simulations of NO Oxynitridation in 4H-SiC/SiO2 ~Substitution Reaction between N and C at the Interface ~)
第78回応用物理学会秋季学術講演会. 2017.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-07-05 22:49:43 +0900Updated at: 2018-06-05 14:10:24 +0900