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2nm以細技術ノードに向けたhigh-k/メタルゲートスタックのCETスケーリング：展望と課題
(Further Scaling of the Capacitance Equivalent Thickness (CET) In High-k/Metal Gate Stacks Toward the 2nm Technology Node and Beyond: Prospects and Challenges)
シリコン材料・デバイス研究専門委員会（Silicon Devices and Materials: SDM）. August 04, 2026-August 06, 2026. Invited
NIMS author(s)
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2026-08-07 03:08:12 +0900 Updated at: 2026-08-07 03:08:12 +0900