原子分解能STEM法を用いたIn0.2Ga0.8Nナノワイヤの原子構造と積層欠陥生成メカニズム評価
(Atomic Structures and Formation Mechanism of Stacking Faults in In0.20Ga0.80N Nanowires Evaluated by Atomic Resolution STEM)
International Conference on Nitride Semiconductors 2013. 2013.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2017-02-26 20:41:47 +0900更新時刻: 2017-12-27 21:24:52 +0900