HOME > Presentation > Detail
原子分解能STEM法を用いたIn0.2Ga0.8Nナノワイヤの原子構造と積層欠陥生成メカニズム評価
(Atomic Structures and Formation Mechanism of Stacking Faults in In0.20Ga0.80N Nanowires Evaluated by Atomic Resolution STEM)
International Conference on Nitride Semiconductors 2013. August 25, 2013-August 30, 2013.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-26 20:41:47 +0900Updated at: 2017-12-27 21:24:52 +0900