Impact of Ultrathin Oxygen-Passivated Interfacial Layer on Electron Mobility of High-k Gate Stacks

Yukinori Morita, Takamasa Kawanago, Takefumi Kamioka, Yuichiro Mitani, NABATAME, Toshihide, ONAYA, Takashi, FUKATA, Naoki, JEVASUWAN, Wipakorn, TSUKAGOSHI, Kazuhito, Takuya Hoshii, Kasidit Toprasertpong, Atsushi Tamura, Koji Kita, Naoya Okada, Kenzo Manabe, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matsukawa, Shinji Migita.

SSDM 2026 (2026 International Conference on Solid State Devices and Materials、国際固体素子・材料コンファレンス). September 14, 2026-September 17, 2026.

Created at: 2026-09-25 03:08:01 +0900 Updated at: 2026-09-25 03:08:01 +0900