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Study of ALD HfO2-based high-k for GaN power devices and Ferroelectric devices

著者NABATAME, Toshihide, Takashi Onaya, Erika Maeda, Masashi Hirose, IROKAWA, Yoshihiro, Koji Shiozaki, KOIDE, Yasuo.
会議名20th International conference on Atomic Layer Deposition (ALD/ALE 2020)
発表年2020
言語English

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