Study of ALD HfO2-based high-k for GaN power devices and Ferroelectric devices

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NABATAME, Toshihide, Takashi Onaya, Erika Maeda, Masashi Hirose, IROKAWA, Yoshihiro, Koji Shiozaki, KOIDE, Yasuo.

20th International conference on Atomic Layer Deposition (ALD/ALE 2020). 2020年06月28日-2020年07月01日. 招待講演

作成時刻: 2020-07-07 03:00:22 +0900更新時刻: 2024-03-05 12:21:28 +0900