Study of ALD HfO2-based high-k for GaN power devices and Ferroelectric devices

NABATAME, Toshihide, Takashi Onaya, Erika Maeda, Masashi Hirose, IROKAWA, Yoshihiro, Koji Shiozaki, KOIDE, Yasuo.

20th International conference on Atomic Layer Deposition (ALD/ALE 2020). 2020. Invited

Created at: 2020-07-07 03:00:22 +0900Updated at: 2024-03-05 12:21:28 +0900