HOME > Presentation > Detail
(Fabrication of HfO2/hydrogenated diamond metal-oxide-semiconductor field effect transistors)
International Conference on Diamond and Carbon Materials. September 02, 2013-September 05, 2013.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 04:00:01 +0900Updated at: 2017-07-10 21:42:02 +0900