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4H-SiC(0001)/SiO2 界面での欠陥準位の分布の第一原理解析
(First-pricnples analysis on defect level distribution at 4H-SiC(0001)/SiO2)
応用物理学会春季学術講演会. 2016.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 04:00:38 +0900Updated at: 2017-07-10 22:32:51 +0900