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ルチル型TiO2界面層がHfO2/Ge MOSデバイスに与える影響
(Effects of Rutile TiO2 Interlayer formation on HfO2/Ge MOS device)
NIMS Conference 2013. 2013.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:40:42 +0900Updated at: 2017-07-10 21:40:12 +0900