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EBIC法によってGaN MISデバイス界面の観察
(Investigation of GaN MIS Interfaces by Electron-beam-induced Current)
The 17th conference on Defects-Recognition, Imaging and Physics . 2017.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-09-29 22:30:10 +0900Updated at: 2018-06-05 14:13:32 +0900