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h-BNを用いたダイヤモンド電界効果トランジスタの輸送特性
(Charge Carrier Transport in Diamond Field-Effect Transistors with h-BN Gate Dielectric)
日本物理学会2018年秋季大会. September 09, 2018-September 12, 2018.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2018-09-28 19:27:06 +0900 Updated at: 2018-09-28 19:27:06 +0900