Change of characteristics for n-GaN MOS capacitors with Hf-rich HfSiOx gate dielectrics by various post-deposition annealing
| 著者 | MAEDA, Erika, NABATAME, Toshihide, HIROSE, Masafumi, YUGE, Kazuya, INOUE, Mari, OHI, Akihiko, IKEDA, Naoki, 清野肇, 塩崎宏司. |
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| 会議名 | INFOS 2019 |
| 発表年 | 2019 |
| 言語 | English |