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Change of characteristics for n-GaN MOS capacitors with Hf-rich HfSiOx gate dielectrics by various post-deposition annealing

著者MAEDA, Erika, NABATAME, Toshihide, HIROSE, Masafumi, YUGE, Kazuya, INOUE, Mari, OHI, Akihiko, IKEDA, Naoki, 清野肇, 塩崎宏司.
会議名INFOS 2019
発表年2019
言語English

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