HOME > Presentation > Detail
Intrinsic Effect of a Nitorogen Atom for Reduction in Leakage Current through Hf-based High-k Gate Dielectrics
35th IEEE Semiconductor Interface Specialist Conference(SISC). December 09, 2004-December 11, 2004.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-25 00:47:07 +0900 Updated at: 2017-07-10 19:09:16 +0900