Intrinsic Effect of a Nitorogen Atom for Reduction in Leakage Current through Hf-based High-k Gate Dielectrics
35th IEEE Semiconductor Interface Specialist Conference(SISC). 2004.
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作成時刻: 2017-02-25 00:47:07 +0900更新時刻: 2017-07-10 19:09:16 +0900