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Intrinsic Effect of a Nitorogen Atom for Reduction in Leakage Current through Hf-based High-k Gate Dielectrics

UMEZAWA, Naoto, 白石賢二, OHNO, Takahisa, 渡部平司, CHIKYOW, Toyohiro, 鳥居和功, 山部紀久夫, 山田啓作, 北島洋, 有門経敏.
35th IEEE Semiconductor Interface Specialist Conference(SISC). 2004.

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    Created at :2017-02-25 00:47:07 +0900 Updated at :2017-07-10 19:09:16 +0900

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