HOME > Presentation > DetailComparison of Leakage Behaviors in pMOS and nMOS with Poly-Si/HfSiON Gate Stacks by EBIC Technique陳 君, 関口 隆史, 高瀬 雅美, 深田 直樹, 知京 豊裕, 蓮沼隆, 山部紀久夫, 左藤基之, 奈良安雄, 山田啓作. 2008年春季第55回応用物理学関係連合講演会 . 2008.NIMS author(s)CHEN, JunFUKATA, NaokiCHIKYO, ToyohiroFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2017-02-14 11:00:38 +0900 Updated at :2017-07-10 20:09:42 +0900