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Comparison of Leakage Behaviors in pMOS and nMOS with Poly-Si/HfSiON Gate Stacks by EBIC Technique

陳 君, 関口 隆史, 高瀬 雅美, 深田 直樹, 知京 豊裕, 蓮沼隆, 山部紀久夫, 左藤基之, 奈良安雄, 山田啓作.
2008年春季第55回応用物理学関係連合講演会 . 2008.

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    Created at :2017-02-14 11:00:38 +0900 Updated at :2017-07-10 20:09:42 +0900

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